ST STP11NK50Z/STP11NK50ZFP/STB11NK50Z handbook

This document describes the features and characteristics of STP11NK50Z - STP11NK50ZFP STB11NK50Z N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, very good manufacturing repeatability, etc.


ST STP11NK50Z/STP11NK50ZFP/STB11NK50Z handbook - cover page
Brand
STMicroelectronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
577 KB
Published
07 August, 2012
Updated
29 September, 2023
MD5 checksum
80E381E7DBFAB7440B0BF02C1A81156D

About this manual

This document provides technical specifications for the STP11NK50Z series of N-channel 500V Super MESH Power MOSFETs. The devices are available in TO-220, TO-220FP, and D2PAK packages and feature Zener-protected gate-source terminals.

What's inside

  • Description
  • Applications
  • Ordering Information
  • Absolute Maximum Ratings
  • Thermal Data
  • Electrical Characteristics
  • Safe Operating Area
  • Mechanical Data

Specifications

Operating Junction Temperature-55 to 150 °C

Frequently asked questions

What are the applications for these MOSFETs?

They are ideal for high current, high speed switching, off-line power supplies, adapters, PFC, and lighting.

What is the maximum continuous drain current for these MOSFETs at a case temperature of 25°C?

The device supports a continuous drain current of 10 A when the case temperature is 25°C.

What is the maximum total power dissipation for the TO-220 and D?PAK packages?

The maximum total dissipation for these packages is 125 W at a temperature of 25°C.

What is the typical static drain-source on-resistance for this series?

The typical Rps(on) value stated in the document is 0.48 Q.

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