Industrial

STP20NE06L is a N-channel MOSFET produced by STMicroelectronics. It has a rated voltage of 60V, a drain current of 20A, and a fast switching time. It is widely used in DC motor control, DC-DC/DC-AC converters, and synchronous rectification.

STP20NE06 is the latest development of STMicroelectronics' unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP20N10L STP20N10LFI is a low threshold power MOS transistor, which has a typical RDS(on) of 0.09 ohms and has the characteristics of high switching speed, strong current capability, high operating temperature, etc. It can be widely used in solenoid and relay drivers, regulators, DC-DC and DC-AC converters, motor control, audio amplifiers, automotive environments (injection, ABS, air bag, lamp drivers, etc.).

STP20N06 is a 60V low-resistance power MOSFET produced by STP. Its typical RDS(on) is 0.06 ohms and it supports repetitive avalanche testing. The maximum junction temperature is 175℃. This MOSFET is mainly used in high current, high frequency switching, relay driver, power regulator, DC-DC and DC-AC converter, motor control, audio amplifier and other applications.

This document describes the features and characteristics of STP200NF04 and STB200NF04 MOSFETs, including low on-resistance, high packing density, and reliable avalanche characteristics.

STMicroelectronis unique StripFET power MOSFET, has extremely high packing density, low resistance, rugged avalanche characteristics, and good manufacturing reproducibility.

This document describes a high-performance power MOSFET product designed by STMicroelectronics, which features low RDS(on), high voltage avalanche and dv/dt capability, as well as low gate charge and switching characteristics. It is suitable for high-current, high-speed switching and switch mode power supply applications.

STP19N06L and STP19N06LFI are N-channel enhancement mode low threshold power MOS transistors with a typical RDS(on) of 0.085 ohms. They are 100% avalanche tested and suitable for high current, high-speed switching, motor control, audio amplifiers, etc.

STP19N06 and STP19N06FI are N-channel enhancement mode power MOS transistors with features such as low on-resistance, high current capability, and 175°C operating temperature. They are suitable for applications such as high current, high speed switching, solenoid and relay drivers, regulators, DC-DC and DC-AC converters, motor control, audio amplifiers, and automotive environment (injection, ABS, air-bag, lamp drivers, etc.).

The STP190NF04 is a N-channel power MOSFET from STMicroelectronis with a typical RDS(on) of 3.9 mΩ and a maximum current of 120A. It supports TO-220, D2PAK and I2PAK packages and is used in high current, high switching speed and automotive applications.

STP17NK40Z/STP17NK40ZFP is a 400V, 0.23Ω, 15A N-channel MOSFET. It has extremely low RDS(on), extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances and very good manufacturing repeatability. This series of products meets the needs of various demanding applications. It is ideal for high current, high speed switching, off-line power supplies, adaptors and PFC, lighting, etc.

This document describes the STP16NS25 and STP16NS25FP N-channel MOSFETs, which have a voltage rating of 250V and an RDS (on) of 0.23Ω. They are suitable for high current, high-speed switching applications, as well as switch mode power supplies and DC-DC converters.

This document describes the features and characteristics of STP16NK65Z and STB16NK65Z-S, two N-channel 650V MOSFET products. These include low on-resistance, high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, etc. These products are suitable for high current, high-speed switching, and offline power supply applications.

This document describes the features and characteristics of the STP16NK60Z, STB16NK60Z-S, and STW16NK60Z N-channel 600V SuperMESH MOSFET products, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

STP16NF06L, STP16NF06LFP is N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET produced by STMicroelectronics, has low RDS(on), exceptional dv/dt capability, low gate charge, and low threshold drive