STP10NC50/STP10NC50FP is a N-channel high voltage MOSFET designed by STMicroelectronics, using the latest MESH OVERLAY process, it has the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. It is widely used in high-frequency, high-voltage switching circuits.
This document provides preliminary technical data for the STP10NC50 and STP10NC50FP N-Channel PowerMESH™ MOSFETs. These devices utilize a high voltage MESH OVERLAY™ process to achieve low on-resistance and exceptional avalanche capabilities. They are designed for high current, high speed switching applications such as switch mode power supplies, DC-AC converters for welding equipment, uninterruptible power supplies, and motor drives.
| Drain-source Voltage | 500 V |
|---|---|
| Drain Current (continuous) | 10 A |
| Total Dissipation | 135 W |
| Package Type | TO-220/TO-220FP |
| Gate Threshold Voltage | 2 V to 4 V |
| Static Drain-source On Resistance | 0.48 Ohm |
| Turn-on Time | 29 ns |
| Reverse Recovery Time | 560 ns |
The maximum operating junction temperature is 150 °C.
The typical static drain-source on resistance is 0.48 Ohm.