This document describes the features and characteristics of the STP10NK80Z series N-channel 800V MOSFET, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
This document provides technical specifications and characteristics for the STP10NK80Z, STP10NK80ZFP, and STW10NK80Z N-Channel SuperMESH™ Power MOSFETs. These devices are designed for high current, high speed switching applications such as switch mode power supplies, DC-AC converters for welding, UPS, and motor drives.
| Drain-source Voltage (VDS) | 800 V |
|---|---|
| Gate Source ESD Rating | 4K V |
They are suitable for high current, high speed switching, switch mode power supplies, and DC-AC converters for welding, UPS, and motor drive.
The maximum continuous drain current is 9 A when the case temperature (TC) is 25°C.
The STP10NK80Z and STW10NK80Z models have a total dissipation of 160 W, while the STP10NK80ZFP model has a rating of 40 W.
The device has a peak diode recovery voltage slope capability of 4.5 V/ns.