STP10NB20 is a high performance N-channel enhancement mode PowerMESH MOSFET designed by SGS-Thomson. Its features are RDS(on) as low as 0.3 Ω, extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge.
This document provides technical specifications for the STP10NB20 and STP10NB20FP N-Channel Enhancement Mode PowerMOSH MOSFETs manufactured by SGS-Thomson Microelectronics. The devices feature a TO-220 and TO-220FP package design, respectively, utilizing a high voltage MESH OVERLAY process for low on-resistance and high dv/dt capability.
The maximum continuous drain current is 10 A.
The device can be stored from -65 to 150 °C.