STP11NB40 and STP11NB40FP are N-channel 400V power MOSFETs with an RDS(on) of 0.48Ω, extremely high dV/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge. They are suitable for high current, high-speed switching, switch mode power supplies, DC-AC converters for welding equipment, uninterruptible power supplies, and motor drive applications.
This document is a technical datasheet for the STP11NB40 and STP11NB40FP N-channel PowerMESH MOSFETs manufactured by STMicroelectronics. The devices utilize a high voltage MESH OVERLAY process to achieve low on-resistance and high dv/dt capability. They are available in TO-220 and TO-220FP packages.
| Drain-source Voltage | 400 V |
|---|---|
| Continuous Drain Current (TO-220) | 10.7 A |
| Typical On-Resistance | 0.48 Ω |
| Total Dissipation (TO-220) | 125 W |
| Package Types | TO-220 / TO-220FP |
The device is suitable for high current, high speed switching, switch mode power supplies, and motor drives.
Yes, the device is 100% avalanche tested.
The maximum operating junction temperature is 150 °C.