This document introduces the MDmesh™ power MOSFET product series from ST, including the STP11NM60, STP11NM60FP, STB11NM60, and STB11NM60-1 models. These products have low on-resistance, high dv/dt, and excellent avalanche characteristics, making them suitable for increasing power density of high voltage converters, enabling system miniaturization and higher efficiency.
This document provides technical specifications for the STP11NM60, STP11NM60FP, STB11NM60, and STB11NM60-1 N-channel 600V MDmesh Power MOSFETs. These devices utilize a revolutionary technology combining Multiple Drain process with PowerMESH horizontal layout to achieve outstanding low on-resistance and excellent avalanche characteristics.
| Input Capacitance | 1000 pF |
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The maximum operating junction temperature is 150 °C.