Industrial

This document is about the STF724 and STN724 PNP Medium Power Transistors. They are manufactured using planar technology, resulting in rugged high performance devices. This document details the products features, characteristics, applications, packaging, component marking, polarity, absolute maximum ratings, temperature characteristics, electrical characteristics etc.

STF715 and STN715 are NPN transistors manufactured using Planar Technology resulting in rugged high performance devices.

The document describes the features and characteristics of a product, including the brand and model information.

STP6NK70Z is an N-channel 700V - 1.5Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET produced by ST company, which has the characteristics of typical RDS(on) = 1.5 Ω, extremely high dv/dt capability, improved ESD capability, 100% Avalanche Rated, minimized Gate Charge, very low Intrinsic Capacitances, and very good manufacturing repeatability.

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET is a high performance MOSFET device from ST, with a typical RDS(on) of 0.93Ω. It is ideal for high current, high speed switching applications such as offline power supplies, adaptors and PFC.

This document describes the features and characteristics of STP5NK90Z and STF5NK90Z N-CHANNEL 900V - 2Ω - 4.5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET, including extremely high dv/dt capability, improved ESD capability, 100% avalanche rated, and minimized gate charge.

STP5NK100Z - STF5NK100Z - STW5NK100Z are ST's high voltage MOSFET products with extremely low RDS(on) and very high dv/dt capability. It is suitable for high current, high speed switching applications, and is ideal for off-line power supplies.

This document describes the absolute maximum ratings and electrical characteristics of the STF4A60 semiconductor device. The device features a repetitive peak off-state voltage of 600V, an R.M.S on-state current of 4A, and is suitable for direct coupling to TTL, HTL, CMOS, and other applications.

STF42 is a small signal NPN transistor with high voltage characteristics and SOT-89 package. It is suitable for applications such as video amplifier circuits and telephone wireline interfaces.

This document describes the features and characteristics of the STF40NF06 N-CHANNEL MOSFET, including low on-resistance, exceptional dv/dt capability, low gate charge, etc. This product is suitable for applications such as DC-DC and DC-AC converters, motor control, audio amplifiers, high current high-speed switching, solenoid and relay drivers, etc.

This document describes the features and characteristics of STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET. The product has extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

STP3HNK90Z - STF3HNK90Z is an N-channel SuperMESH™ Power MOSFET with a working voltage of 900V, a typical on-resistance of 3.5Ω, and a rated current of 3A. The product has extremely high dv/dt capability, is 100% avalanche tested, minimizes gate charge, and has very low intrinsic capacitances with excellent manufacturing repeatability.

STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH™ MOSFET is a high-performance MOSFET device produced by ST company. Its characteristics are RON typical value is 7.2Ω, extremely high dv/dt capability, ESD improved capability, 100% avalanche test, new generation high voltage benchmark, and minimized gate charge. It is suitable for low-power battery chargers, switch-mode low-power power supplies (SMPS), low-power, ballasts, CFL (compact fluorescent lamps) and other applications.