HITACHI Manuals

2SA1171 is a silicon PNP epitaxial transistor used in low frequency small signal amplifiers.

The 2SA1122 is a low frequency amplifier produced by NXP. Its maximum collector voltage is -55V, its maximum collector-emitter voltage is -55V, its maximum emitter-base voltage is -5V, its maximum collector current is -100mA, its maximum collector power dissipation is 150mW, its junction temperature is 150 °C, and its storage temperature is -55 to +150 °C.

The document introduces the 2SA1121 Silicon PNP Epitaxial application, which is a low-frequency amplifier and complementary pair with 2SC2618. The document provides detailed information on the absolute maximum ratings and electrical characteristics of the 2SA1121.

2SA1083, 2SA1084, and 2SA1085 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers and complementary pairing with 2SC2545, 2SC2546, and 2SC2547.

2SA1083, 2SA1084, 2SA1085 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers. They are complementary pairs with 2SC2545, 2SC2546, and 2SC2547.

2SA1052 is a silicon PNP type transistor with low frequency amplifier application

2SA1031, 2SA1032 are Silicon PNP Epitaxial, applied to low frequency low noise amplifier, is the complementary pair of 2SC458 (LG) and 2SC2310

This document describes the features and characteristics of 2SA1031 and 2SA1032, including their application as low frequency low noise amplifiers, complementary pairing with 2SC458 (LG) and 2SC2310, etc.

2SA1029 and 2SA1030 are silicon PNP epitaxial transistors suitable for low frequency amplifiers. They are complementary pairs with 2SC458 and 2SC2308. The features and characteristics include: collector to base voltage ranging from -30V to -55V, collector to emitter voltage ranging from -30V to -50V, emitter to base voltage of -5V, collector current of -100mA, emitter current of 100mA, collector power dissipation of 300mW, and maximum operating temperature of 150°C.

2SA1025, 2SA1081, 2SA1082 are three silicon PNP type transistors, used in low frequency amplifiers, can be used with 2SC2396, 2SC2543 and 2SC2544.

This document describes the applications of 2SA1025, 2SA1081, and 2SA1082 silicon PNP epitaxial transistors, including low frequency amplifiers and complementary pairing with 2SC2396, 2SC2543, and 2SC2544.

2SK1298 is a low on-resistance, high speed switching, low drive current silicon N-channel MOSFET, suitable for motor drive, DC-DC converter, power switch and solenoid drive.

2SK1296 is a high-speed power switch with low on-resistance, high switching speed and low drive current. It can be driven from a 5V source and is suitable for motor drive, DC-DC converter, power switch and solenoid drive.

2SK1254(L) and 2SK1254(S) are N-channel MOSFETs suitable for high-speed power switching applications. Their features include low on-resistance, high switching speed, and 4V gate drive capability (can be driven from a 5V source). They are suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.