HITACHI Manuals

1SS82 is a high-voltage switching silicon epitaxial planar diode with a rated reverse voltage of 200 V. The diode has high reliability and is glass-sealed.

BB403M is an individual type number of HITACHI BBFET, it is a MOS FET IC VHF/UHF RF Amplifier with build in Biasing Circuit. It has high forward transfer admittance (|yfs|=42 mS typical value, f=1kHz) and built in ESD absorbing diode, which can withstand up to 250V at C=200pF, Rs=0 conditions.

The Hitachi HM51(S)4260C is a CMOS dynamic RAM organized as 262,144-word × 16-bit. It has achieved higher density, higher performance, and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4260C offers fast page mode as a high-speed access mode. Multiplexed address input allows the HM51(S)4260C to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-pin plastic TSOPII. The internal refresh timer enables HM51S4260C self-refresh operation.

HL1327CF/CN/SN/PF are 1.3µm InGaAsP Fabry-Perot laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources in short and medium range fiberoptic communication systems. Laser output is delivered from the coaxial package through an attached single mode fiber. A built-in photodiode provides monitor current output.

This document introduces Hitachi AIC Inc.'s Screw Terminal Type Aluminum Electrolytic Capacitors (HCGHA series), which have a warranty life of 2000 hours at 105°C achieved through improvement of the electrolyte liquid. The ripple current should be under 60 Arms at the M5 terminal according to the permissible current. The document also provides the correction coefficient of ripple current under different temperatures, frequencies, and voltages.

The HB56TW432D Series, HB56TW433D Series is a 4,194,304-word × 32-bit High Density Dynamic RAM Module from Samsung. It has a 72-pin Zig Zag Dual tabs socket type compact and thin package, a single supply of 3.3 V (±0.3 V), and high speed, low power dissipation, fast page mode capability and other features.

This document introduces the HA12141/142NT, HA12170NT, HA12161/162FP products, including functions, features, and ordering information.

2SA1194(K) is a silicon PNP epitaxial transistor produced by Hitachi. It has high gain characteristics and can be used in high gain amplifiers.

This document describes the features and characteristics of the 2SA1194(K) silicon PNP epitaxial high gain amplifier.

2SA1193(K) is a silicon PNP-type NPN transistor produced by Hitachi. It features high gain and is suitable for high gain amplifiers.

This document describes the features and characteristics of the 2SA1193(K) Silicon PNP Epitaxial Darlington Application High Gain Amplifier.

2SA1190, 2SA1191 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers, and they are complementary pairs with 2SC2855 and 2SC2856.

2SA1190, 2SA1191 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers, and can be used as complementary pairs with 2SC2855 and 2SC2856.

2SA1188 and 2SA1189 are silicon PNP transistors, used in low frequency amplifiers, as complementary pairs with 2SC2853 and 2SC2854.

2SA1188, 2SA1189 are silicon PNP type transistors, which are used for low frequency amplifiers and are complementary to 2SC2853 and 2SC2854.