HITACHI Manuals

The 2SC1345(K) is a silicon NPN epitaxial transistor that is used in low frequency low noise amplifiers.

2SC1344 and 2SC1345 are silicon NPN epitaxial devices used for low frequency low noise amplifier applications. They have low noise figure and high gain bandwidth product.

2SC1342 is a silicon NPN epitaxial planar transistor primarily used for VHF amplifiers, mixers, and local oscillators.

2SC1213A(K) is a NPN type transistor produced by Sanyo, and its application scenarios include low frequency amplifiers and medium speed switches. Its typical package is TO-92.

2SC1213, 2SC1213A are NPN silicon epitaxial transistors produced by Mitsubishi Electric Corporation. They are used as low frequency amplifiers and are complementary pairs of 2SA673 and 2SA673A.

2SC1213, 2SC1213A are NPN type transistors, mainly used for low frequency amplifiers.

The document describes the absolute maximum ratings and electrical characteristics of 2SC1212 and 2SC1212A. These are silicon NPN epitaxial low-frequency power amplifier devices suitable for low-frequency power amplifier applications. They have higher collector-to-base and collector-to-emitter voltage ratings, lower emitter-to-base voltage rating, maximum collector current of 1A, and maximum collector power dissipation of 8W. In terms of electrical characteristics, the devices have higher collector-to-base and collector-to-emitter breakdown voltages, lower collector cutoff current, higher DC current transfer ratio, moderate base-to-emitter voltage and collector-to-emitter saturation voltage, and higher gain bandwidth product. Additionally, the document provides grouping information for the devices.

2SC1212 and 2SC1212A are silicon NPN epitaxial transistors, used in low frequency power amplifiers.

The 2SC1162 is a silicon NPN epitaxial transistor used for low frequency power amplification. It is complementary to 2SA715 and suitable for complementary pairs. It has a low noise figure and a high gain bandwidth product.

1SS277 is an ADE silicon epitaxial planar diode for UHF/VHF tuner band switch. 1SS277 features low forward resistance (rf = 0.5Ω max) and ultra small glass package (UMD) for easy mounting and high reliability.

1SS286 is a silicon Schottky barrier diode for various detectors, high speed switching. It has very low reverse current, very good detection efficiency, and small glass package (MHD) for easy mounting and high reliability.

1SS199 Silicon Schottky Barrier Diode is suitable for various detectors and high-speed switching applications. It has excellent detection efficiency and a small temperature coefficient. The small glass package (MHD) allows for easy mounting and ensures high reliability.

1SS120 is a Si Epitaxial Planar Diode for High Speed Switching, features low capacitance (C = 3.0pF max) and short reverse recovery time (trr = 3.5ns max).

This document describes the features of the 1SS119 silicon epitaxial planar diode, including low capacitance, short reverse recovery time, and small glass package. The diode is suitable for high-speed switching applications.

1SS118 is a silicon planar diode produced by Texas Instruments. It features high average forward current and high reliability.