HITACHI Manuals

The 1SS110 is a silicon epitaxial planar diode produced by HITACHI. It is suitable for 5mm pitch high speed automatic insertion and has low forward resistance and small glass package

1SS108 is a silicon Schottky barrier diode for various detectors and high speed switching. The diode has a very good detection efficiency, a small temperature coefficient and a high reliability with glass seal.

The HD74ALVCH16831 is a 1-to-4 address register/driver designed for operation with a VCC range of 2.3V to 3.6V. It is suitable for applications where a single address bus drives four separate memory locations. The HD74ALVCH16831 can function as either a buffer or a register, depending on the logic level of the select (SEL) input. In buffer mode (SEL logic high), the outputs mirror the inputs and are controlled by two output enable (OE) controls. Each OE control operates two groups of nine outputs. In register mode (SEL logic low), the device operates as an edge-triggered D-type flip flop. On the positive transition of the clock (CLK) input, data set up at the A inputs is stored in internal registers. The OE controls function the same way as in buffer mode. When OE is logic low, the outputs are in a normal logic state (either high or low logic level). When OE is logic high, the outputs enter a high impedance state. To ensure the high impedance state during power up or power down, OE should be pulled up to VCC using a pullup resistor, with the minimum value determined by the driver's current sinking capability. SEL and OE do not affect the internal operation of the flip flops, allowing for retention of old data or entry of new data while the outputs are in the high impedance state.

2SA1484 is a silicon PNP epitaxial low frequency amplifier with characteristics such as collector to base voltage, collector to emitter voltage, and emitter to base voltage.

2SJ317 is a high voltage, high frequency, low on-resistance P type MOSFET. Suitable for camera or VTR motor drive circuit, power switch, solenoid drive etc.

The document is downloaded from the Electronic-Library Service at www.ICminer.com and it queries the suppliers of 2SJ318(L). The suppliers provide information about the 2SJ318(L) product.

2SJ318L is a P-channel MOSFET from NXP that is suitable for high-voltage switching applications. It features low on-resistance, high switching speed, and low drive current.

2SJ318(L), 2SJ318(S) is a silicon P-channel MOS FET with low on-resistance, high switching speed and low drive current, suitable for switching regulator, DC-DC converter and other applications.

This document describes the application field and features of 2SJ319(L), 2SJ319(S) Silicon P-Channel MOS FET, including low on-resistance, high speed switching, low drive current, and suitability for switching regulators, DC-DC converters.

This document describes the application, features, and characteristics of the 2SJ278 Silicon P-Channel MOS FET, including high-speed power switching.

2SJ247 Silicon P-Channel MOS FET is used for high speed power switching, with features of low on-resistance, high speed switching, low drive current, and suitable for switching regulator, DC-DC converter.

This document describes the application and features of 2SJ248 Silicon P-Channel MOS FET, including low on-resistance, high speed switching, low drive current, etc. It is suitable for switching regulator, DC-DC converter.

2SJ217 is a P-channel MOSFET with low on-resistance, high switching speed, low drive current, etc. It is suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.