MITSUBISHI Manuals

This document describes the features and characteristics of the 2003 Mitsubishi HVIGBT module CM800E2C-66H. The module is suitable for high power switching and is insulated. It has a current rating of 800A and a voltage rating of 3300V.

CM1200HC-66H is a high power switching use insulated gate bipolar transistor module produced by Mitsubishi Electric. The module has a rated current of 1200A and a rated voltage of 3300V, and is suitable for applications such as traction drives, high reliability converters/inverters and DC choppers.

This document describes the features and applications of the 2003 Mitsubishi HVIGBT module CM1200HB-66H, which is suitable for inverters, converters, DC choppers, induction heating, and DC to DC converters.

This document describes the high power switching and insulation characteristics of the 2003 Mitsubishi HVIGBT module CM800E2Z-66H. The module is suitable for DC choppers and dynamic braking choppers.

CM400DY-66H is a high power switching insulated gate bipolar transistor module produced by Mitsubishi Electric. It adopts an insulated structure and has the characteristics of high voltage, high turn-off speed, low conduction loss and high frequency switching.

CM1200HA-66H is a HVIGBT module produced by Mitsubishi Electric, with a maximum collector current of 1200A and a maximum collector-emitter voltage of 3300V.

CM1200HB-50H is a high voltage insulated gate bipolar transistor module manufactured by Mitsubishi. This module has a collector current of 1200A and a collector-emitter reverse voltage of 2500V. It is suitable for applications such as inverters, converters, DC choppers, induction heating and DC to DC converters.

CM800HB-50H is a high voltage insulated gate bipolar transistor (HVIGBT) module produced by Mitsubishi Electric. It has a rated current of 800A and a rated blocking voltage of 2500V. It is suitable for applications such as inverters, converters, DC choppers, induction heating, and DC-DC converters.

CM400DY-50H is a high voltage insulated gate bipolar transistor (HVIGBT) module produced by Mitsubishi. It is used in inverters, converters, DC choppers, induction heating, DC to DC converters and other devices.

CM1200HA-50H is a Mitsubishi Electric high voltage insulated gate bipolar transistor module (HVIGBT) with a maximum collector current of 1200A and a maximum collector-emitter voltage of 2500V. It is used in inverters, converters, DC choppers, induction heating, DC/DC converters, etc.

This document introduces the Mitsubishi HVIGBT module CM1200DC-34N from July 2005. The module is used for high power switching applications and features an insulated type G IC with a current rating of 1200A and voltage rating of 1700V. It is a 2-element insulated type G module with an AISiC baseplate and trench gate IGBT: CSTBT™ with a soft reverse recovery diode. It is suitable for traction drives, high reliability converters/inverters, and DC choppers.

This document describes the MITSUBISHI HVIGBT modules CM2400HC-34N, released in July 2005. These modules are high power switching insulated type G IC HVIGBT modules. They have a current rating of 2400A and a voltage rating of 1700V. The modules are suitable for traction drives, high reliability converters/inverters, and DC choppers.

The CM1800HC-34N is a high voltage insulated gate bipolar transistor module produced by Mitsubishi Electric. It has a maximum voltage of 1700V, a maximum current of 1800A, and a rated power of 360W. The operating temperature range is -40°C to +125°C. The package form is TO-247-4L, and there are 3 M8 bolt holes and 3 M4 bolt holes for mounting.