MITSUBISHI Manuals - Manual Library

MITSUBISHI MGFC42V7785A Manual

The MGFC42V7785A is an internally matched GaAs power FET specially designed for use in 7.7-8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. It features high output power, high gain and high efficiency.

MITSUBISHI MGFC44V3642 Manual

The MGFC44V3642 is an internally matched GaAs power FET especially designed for use in 3.6-4.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI MGFC44V4450 Manual

MITSUBISHI MGFC44V5964 Manual

MITSUBISHI MGFC44V6472 Manual

The MGFC44V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI MGFC45V3436A Manual

MGFC45V3436A is a 32W power gain GaAs FET for use in 3.4-3.6GHz band amplifiers. It features high output power, high power gain, high power added efficiency and low distortion.

MITSUBISHI MGFC45V3642A Manual

The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6-4.2GHz band amplifiers. The device offers high reliability and provides high output power, high power gain and high power added efficiency.

MITSUBISHI MGFC45V6472A Manual

The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI MGFC47A7785 Manual

MGFC47A7785 is a high-power GaAs FET operating at 7.7 GHz to 8.5 GHz. It is designed for Class A operation and has a power output of 47W. It also features high output power, high power gain and high power added efficiency. It is suitable for satellite earth station communication transmitters and VSATs.

MITSUBISHI MGFK38A3745 Manual

This document describes an internally matched power GaAs FET designed for use in amplifiers in the 13.75-14.50 GHz band. It features high output power, high linear power gain, and high power added efficiency.

MITSUBISHI MGFK41A4045 Manual

The MGFK41A4045 is a GaAs power FET from Panasonic. It is suitable for use in 14.0-14.5GHz band amplifiers. The product features high output power and high linear power gain. The recommended working conditions are VDS=10V, ID=3.0A and RG=50ohm.

MITSUBISHI MGFK44A4045 Manual

The MGFK44A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI MGFK25V4045 Manual

The MGFK25V4045 is an internally matched GaAs power FET especially designed for use in 14.0-14.5GHz band amplifiers. The device features high output power, high linear gain and high power added efficiency. It is suitable for 14.0-14.5GHz band power amplifiers.

MITSUBISHI MGFK30V4045 Manual

MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0-14.5GHz band amplifiers. The product features reliable packaging, high output power, high linear gain and high power added efficiency.

MITSUBISHI MGFK33V4045 Manual

The MGFK33V4045 is an internally matched GaAs power FET designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.