MITSUBISHI Manuals - Manual Library

MITSUBISHI ELECTRIC MGFS48B212 Manual

The MGFS48B2122 is a 60W push-pull type GaAs power FET specially designed for use in 2.11-2.17GHz band amplifiers. The product has high output power, high power gain and high power added efficiency, and can be used for W-CDMA base station's 2.11-2.17GHz band power amplifier.

MITSUBISHI ELECTRIC MGFS48V2527 Manual

MGFS48V2527 is a 60W GaAs power FET from Mitsubishi Electric with a power gain of 10dB for use in 2.5-2.7GHz band power amplifiers.

MITSUBISHI ELECTRIC MGFS52BN2122A Manual

This datasheet provides information on the specifications, characteristics and usage recommendations for MGFS52BN2122A products.

MITSUBISHI ELECTRIC MGFC36V3436 Manual

MITSUBISHI ELECTRIC MGFC36V4450A Manual

The MGFC36V4450A is a GaAs power FET specially designed by Toshiba for use in 4.4-5.0GHz band amplifiers. The product has high output power, high gain, high power added efficiency and low distortion.

MITSUBISHI ELECTRIC MGFC36V5258 Manual

The MGFC36V5258 is a 5.2 – 5.8 GHz band 4W power GaAs FET specially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC36V5964A Manual

This document describes a C-band internally matched power GaAs FET with a frequency range of 5.9-6.4 GHz. The device features high output power, high power gain, high power added efficiency, and low distortion, making it suitable for power amplifiers and digital radio communication applications in the 5.9-6.4 GHz band.

MITSUBISHI ELECTRIC MGFC36V6472A Manual

MGFC36V6472A is a high power GaAs FET produced by Toshiba, mainly used in 6.4-7.2GHz band power amplifiers.

MITSUBISHI ELECTRIC MGFC39V3436 Manual

The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC40V4450 Manual

The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4-5.0GHz band amplifiers. The device features excellent output power, gain and efficiency.

MITSUBISHI ELECTRIC MGFC40V5258 Manual

The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2-5.8 GHz band amplifiers.

MITSUBISHI ELECTRIC MGFC40V5964 Manual

The MGFC40V5964 is an internally impedance-matched GaAs power FET designed for use in 5.9 - 6.4 GHz band amplifiers. It features high output power, high power gain, high power added efficiency, and low distortion.

MITSUBISHI ELECTRIC MGFC40V6472 Manual

MGFC40V6472 is an internally matched GaAs power FET designed for use in 6.4 - 7.2 GHz band amplifiers

MITSUBISHI ELECTRIC MGFC42V3436 Manual

The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC42V4450 Manual

The MGFC42V4450 is an internally impedance-matched GaAs power FET designed for use in 4.4-5.0 GHz band amplifiers. It features high output power, high power gain, high power added efficiency, and low distortion.