MITSUBISHI Manuals

MITSUBISHI ELECTRIC MGFC42V5258 Manual

MGFC42V5258 is a GaAs power field-effect transistor produced by Mitsubishi Electric. It is suitable for 5.2-5.8GHz band power amplifier applications.

MITSUBISHI ELECTRIC MGFC42V5964A Manual

The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. It has high reliability, is internally matched to 50 ohm system, and has high output power, high power gain and high power added efficiency.

MITSUBISHI ELECTRIC MGFC45B3436B Manual

MGFC45B3436B is a radio frequency power device produced by Mitsubishi Electric. The working frequency is 3.4-3.6GHz, the maximum output power is 30W, the output power gain is 11dB, and the distortion is -45dBc.

MITSUBISHI ELECTRIC MGFC45V4450A Manual

The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4-5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC45V5964A Guide

The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC47A4450 Manual

The MGFC47A4450 is a power FET designed by Mitsubishi Electric Corporation for use in 4.4-5.0GHz band amplifiers. It has high output power, high gain and high efficiency.

MITSUBISHI ELECTRIC MGFC47B343 Manual

MITSUBISHI ELECTRIC MGFC47V5864 Manual

The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4 GHz band amplifiers. It features class AB operation, high output power, high power gain and high power added efficiency. It is suitable for use in satellite earth-station communication transmitter and VSAT.

MITSUBISHI ELECTRIC MGFC36V3742A Manual

The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7-4.2GHz band amplifiers. Product features include: internally matched to 50ohm system, high output power, high power gain, high power added efficiency and low distortion.

MITSUBISHI ELECTRIC MGFC36V5867 Manual

MGFC36V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8-6.75GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC36V7177A Manual

MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1-7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI ELECTRIC MGFC36V7785A Manual

The MGFC36V7785A is an internally matched GaAs power FET designed for use in 7.7-8.5 GHz band amplifiers. It features Class A operation, internal matching to a 50-ohm system, high output power, high power gain, high power added efficiency, and low distortion.