MITSUBISHI Manuals - Manual Library

MITSUBISHI MGF0952P Manual

MITSUBISHI MGF0953P Manual

MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched is MG brand's GaAs FET product, with high output power, high power gain and high power added efficiency, suitable for L/S band power amplifiers.

MITSUBISHI MGF1451A Manual

MGF1451A is a GaAs MESFET power device produced by Mitsubishi Electric. It has high gain and high P1dB characteristics and is suitable for S to Ku band low noise amplifiers.

MITSUBISHI MGF1951A Manual

MITSUBISHI MGF1952A Manual

MGF1952A is a microwave power MES FET device produced by Mitsubishi Electric. It is used in S to Ku band power amplifiers.

MITSUBISHI MGF1953A Manual

MGF1953A is a power MESFET designed by Mitsubishi Electric for use in S to Ku band power amplifiers.

MITSUBISHI MGF1954A Manual

The MGF1954A is a power MES FET from Mitsubishi Electric that is designed for use in S to Ku band power amplifiers. This device has high gain and high P1dB, with typical values of 5.0dB and 23dBm, respectively. It is suitable for use in S to Ku band low noise amplifiers.

MITSUBISHI MGF2407A Manual

MGF2407A is a N-channel schottky gate high power GaAs FET designed for use in S to Ku band amplifiers. This device features high output power, high linear gain and high power added efficiency.

MITSUBISHI MGF2415A Manual

MGF2415A is a GaAs FET with an N-channel Schottky gate, produced by Mitsubishi Electric Corporation. It is designed for use in S to Ku band amplifiers. Its features are: high output power, high linear power gain and high power added efficiency.

MITSUBISHI ELECTRIC MGF2430A Manual

The MGF2430A is a high-power GaAs FET produced by Mitsubishi Electric Corporation. It is designed for use in S to Ku band amplifiers. The MGF2430A features high output power, high linear power gain, and high power added efficiency.

MITSUBISHI ELECTRIC MGF2445A Manual

The MGF2445A is a power GaAs FET with an N-channel schottky gate, designed for use in S to Ku band amplifiers.

MITSUBISHI ELECTRIC MGF4851A Manual

The MGF4851A is a power InGaAs HEMT designed by Mitsubishi Electric for use in S to K band amplifiers. It features high gain and high P1dB, with typical values of 11 dB and 14.5 dBm, respectively.

MITSUBISHI ELECTRIC MGF0904A Manual

MGF0904A is a GaAs FET with an N-channel schottky gate, designed for use in UHF band amplifiers. It features high output power (Po=28.0dBm), high power gain (Gp=13.0dB) and high power added efficiency (P.A.E =40%).

MITSUBISHI ELECTRIC MGF0905A Manual

This document introduces the MGF0905A high-power GaAs FET, which is designed for UHF band amplifiers and features high output power, high power gain, and high power added efficiency.

MITSUBISHI ELECTRIC MGF0906B Manual

The MGF0906B is a GaAs FET with an N-channel schottky gate, designed for use in UHF band amplifiers. The device features high output power, high power gain and high power added efficiency. It can be used for UHF Band power amplifiers.