Infineon IKW25T120 IGBT Datasheet

IKW25T120 is a low loss DuoPack IGBT from Infineon, which is produced using TrenchStop and Fieldstop technology and features a soft, fast recovery anti-parallel EmCon HE diode.


Infineon IKW25T120 IGBT Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
16
File format
PDF
File size
881 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
47BB09800EE07FB6903D8D009A974A24

About this manual

The IKW25T120 is a 1200 V, 25 A IGBT from Infineon's TrenchStop® series, designed for frequency converters and UPS applications. It features low loss, low EMI, low gate charge and a fast‑recovery anti‑parallel diode.

Key specifications include a collector‑emitter voltage of 1200 V, continuous collector current of 25 A, power dissipation of 190 W at 25 °C, and a turn‑on delay of 50 ns. The device complies with JEDEC, RoHS and J‑STD‑020 standards and is supplied in a TO‑247‑3‑21 package.

What's inside

  • Maximum Ratings
  • Thermal Resistance
  • Electrical Characteristics
  • Switching Characteristics
  • Typical Switching Times
  • Thermal Equivalent Circuit
  • Legal Disclaimer

Specifications

Collector‑emitter voltage (VCE)1200 V
Continuous collector current (IC)25 A
Gate‑emitter voltage (VGE)+20 V
Power dissipation (PD) at 25 °C190 W
Turn‑on delay time (t_on) at 25 °C50 ns

Frequently asked questions

What is the maximum collector‑emitter voltage of the IKW25T120?

The IKW25T120 can withstand a collector‑emitter voltage of up to 1200 V.

What continuous collector current can the IKW25T120 handle?

It is rated for a continuous collector current of 25 A.

How much power can the IKW25T120 dissipate at 25 °C?

The device can dissipate up to 190 W at a case temperature of 25 °C.

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