This document provides detailed information on the BSP125 SIPMOS power transistor, including product features, model, parameters, and packaging.
The BSP125 is an N‑channel SIPMOS power transistor offered in P‑SOT‑223 and PG‑SOT‑223 packages. It is designed for low‑voltage, high‑current switching applications and includes detailed electrical and thermal characteristics.
Key specifications include a continuous drain current of 0.12 A at 25 °C, a pulsed drain current of 0.48 A, a breakdown voltage of 600 V, and a typical on‑state resistance of 0.26 Ω. The device operates from –55 °C to +150 °C and can dissipate up to 1.8 W.
| Power dissipation (Ptot) | 1.8 W |
|---|---|
| Package | P‑SOT‑223 / PG‑SOT‑223 |
It is offered in P‑SOT‑223 and PG‑SOT‑223 packages.
The transistor can dissipate up to 1.8 W.