This document describes the features and characteristics of the ASI UHBS60-2 model, including its maximum ratings, current, voltage, and frequency parameters.
This document describes the features and characteristics of the NPN Silicon RF Power Transistor UHBS30-2, which is suitable for high-frequency applications.
The UHBS30-1 is a NPN silicon RF power transistor with maximum ratings of 9.0 A, 50 V, 30 V and 4.0 V. It features Omnigold™ metalization system, 6L FLG package and 1.5 OC/W thermal resistance.
The document describes the features and characteristics of the ASI UHBS15-1, which is an NPN silicon RF power transistor with excellent performance and high reliability.
The document provides information about the features and characteristics of the ASI MLN1030SS model, including minimum, maximum, and typical values for various parameters.
The ASI MLN1033F is a NPN silicon RF power transistor designed for applications requiring high power and good thermal performance. It features a maximum power dissipation of 20.6W and a gain of 12dB.
The ASI MLN1037F is a NPN silicon RF power transistor from Advanced Semiconductor, Inc. It features the Omnigold™ metallization system, and is rated for 10 A current, 60 V and 35 V voltage, and a maximum power dissipation of 140 W.
This is a product manual introducing the characteristics and features of ASI OSC-0.3C. This product is a NPN silicon RF power transistor with Omnigold™ metalization system, maximum current of 225mA, maximum voltage of 25V, and maximum power of 5.0W.
