One of the bigger challenges of the 21st century is to deal with the growing need for power and, at the same time, the necessity of product compactness. The new MDmesh™ V series from STMicroelectronics, based on the super junction concept, meets these targets by offering an extremely low RDS(on) value in a given package, unobtainable in standard HV MOSFETs. In addition to the dramatic reduction of RDS(on), super junction MOSFETs are extremely fast in transients and this may lead to some issues when a better performing technology replaces an older version on the same board with the same driving network. The two main components in the ST super junction MOSFET family (MDmesh™ II and MDmesh™ V) are analyzed and compared in terms of energy losses, voltage, and current rates. It is shown how the external driving network impacts on their performances. Furthermore, a separate section is dedicated to the layout parasitic effects and their impact on MOSFET behavior. It is clear in the end that layout can be crucial, especially when managing very fast transients, and it must be carefully planned in order to help the MOSFET exploit its best potential.
This document analyzes the STMicroelectronics MDmesh V and MDmesh || super junction MOSFET families, comparing their energy losses, voltage, and current rates. It highlights how the external driving network impacts their performance and addresses issues arising when replacing older versions on the same board.
The MDmesh V series offers an extremely low Rds(on) value in a given package that is unobtainable in standard HV MOSFETs.
The document recommends using a Kelvin source connection to minimize common source inductance.