STMicroelectronics AN3161 Using STGW35HF60WD IGBT in Parallel

This application note introduces the STGW35HF60WD 35 A, 600 V ultra fast PT IGBT and explains how to parallel this device in high power applications.

Brand: STMicroelectronics
Category: Other Electronics
Document type: Application Note
Language: English
Pages: 14
File format: PDF
File size: 761 KB
Published: 06 August, 2012
Updated: 01 October, 2023
MD5 checksum: AE516EF3F161DD63FB386C7F187359AB
PDF: STMicroelectronics AN3161 Using STGW35HF60WD IGBT in Parallel PDF

About this manual

This document provides guidelines for paralleling IGBTs, focusing on the impact of saturation voltage (Vce(sat)) and thermal imbalances. It explains why Punch-Through (PT) IGBTs require special care due to their negative Vce(sat) temperature coefficient, which can lead to thermal runaway if not managed correctly.

What's inside

Saturation voltage impact on parallel
PT, NPT and trench field stop
General guidelines on paralleling
Thermal system impact
Layout considerations
New advanced planar PT STGW35HF60WD
Notes on technology and Vce(sat) grouping
Eoff impact on parallel
The STGW35HF60WD on the test bench
Conclusion

Specifications

Current rating	35 A
Voltage rating	600 V
Technology type	advanced PT IGBT

Frequently asked questions

What is the rated current and voltage of the STGW35HF60WD IGBT?

The STGW35HF60WD is a 35 A, 600 V ultra fast IGBT.

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