STGD3NB60SD is a high voltage IGBT produced by STMicroelectronics. Its rated voltage is 600 V and its rated current is 3 A. It is packaged in a DPAK package.
This document describes the STGD3NB60SD, an N-Channel 3A - 600V DPAK Power MESH™ IGBT from STMicroelectronics. The device features high input impedance and very low on-voltage drop, making it suitable for static relays and motor control applications where frequency is below 1kHz.
The datasheet provides absolute maximum ratings, electrical characteristics including switching losses and thermal data, as well as graphical representations of output and transfer characteristics.
| Collector-Emitter Voltage (Vces = 0) | 600 V |
|---|---|
| Gate-Emitter Voltage Max | +20 V |
| Collector Current (continuous) at Tj = 25 °C | 3 A |
| Total Dissipation at Tj = 25 °C | 48 W |
| Storage Temperature Range | -65 to 175 °C |
| Package Type | DPAK (TO-252) |
No, the suffix 'S' identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).
The maximum operating junction temperature (Tj) is 175 °C.