STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances using the latest high voltage technology based on a patented strip layout. These IGBTs have very low switching times and are suitable for high frequency applications (<20KHZ). The document describes the features and characteristics of the STGP3NB60M and STGD3NB60M models.
This document describes the STMicroelectronics PowerMESH™ IGBT family, specifically models STGP3NB60M and STGD3NB60M. These N-channel devices feature a 600V collector-emitter voltage rating and are optimized for high-frequency applications with very low switching times (less than 20kHz). The suffix 'M' indicates the optimization for these specific frequency requirements.
| Continuous Collector Current @25°C | 6 A |
|---|---|
| Continuous Collector Current @100°C | 3 A |
| Package Types | TO-220, DPAK |
| Max Operating Junction Temperature | 150 °C |
They are designed for motor controls and SMPS/PFC circuits, supporting both hard switching and resonant topologies.
The suffix 'M' identifies a family optimized to achieve very low switching times for high frequency applications.