STGD3NB60H is a high-performance N-channel IGBT launched by STMicroelectronics, with high input impedance, low on-voltage drop, low gate charge, high current capability, very high frequency operation, tail current and other characteristics.
This document is a technical datasheet for the STMicroelectronics STGD3NB60H, an N-channel 3A - 600V TO-252 PowerMESH™ IGBT. The device features very low switching times suitable for high-frequency applications below 120kHz and utilizes a patented strip layout for outstanding performance.
The datasheet provides absolute maximum ratings, electrical characteristics including static and dynamic parameters, thermal data, safe operating areas, and mechanical dimensions for the DPAK (TO-252) package with suffix 'T4'. It is intended for use in high-frequency motor controls and SMPS/PFC circuits.
| Emitter-Collector Voltage | 20 V |
|---|---|
| Gate-Emitter Voltage | +/- 20 V |
| Collector Current (continuous) at Tc = 100 °C | 3 A |
| Total Dissipation at Tj = 25 °C | 35 W |
| Thermal Resistance Junction-case Max | 3.57 °C/W |
It is optimized for high frequency motor controls and SMPS and PFC in both hard switch and resonant topologies.
The maximum operating junction temperature (Tj) is 150 °C.