stgd6nc60hd is a 6a - 600v n-channel igbt produced by stmicroelectronics. it has the characteristics of low voltage drop, low on-state losses, low recovery energy, high frequency operation, etc.
This document describes the STGD6NC60HD, an N-channel 6A - 600V Very Fast PowerMESH™ IGBT designed for high-frequency applications. The device features a patented strip layout to achieve outstanding performance with low on-voltage drop and very soft ultra-fast recovery anti-parallel diode characteristics.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal data, switching parameters, and collector-emitter diode specifications. It also includes mechanical dimensions for the TO-252 (DPAK) package and tape and reel shipment details.
| Collector-Emitter Voltage (Vces) | 600 V |
|---|---|
| Collector Current (continuous) @25°C | 10 A |
| Collector Current (continuous) @100°C | 6 A |
| Total Dissipation at Tc = 25°C | 50 W |
| Operating Junction Temperature (Tj) | -55 to +150 °C |
| Thermal Resistance Junction-case (Rthj-case) | 2.5 °C/W |
The maximum continuous collector current is 10 A when the case temperature is 25°C.
The total dissipation rating is 50 W when the case temperature is 25°C.
The device can be stored between -55°C and 150°C.