This document describes the features and characteristics of the STMicroelectronics STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK internally clamped PowerMESH™ IGBT, released on January 13, 2005. These include high input impedance, low on-voltage drop (Vcesat), high current capability, off losses including tail current, and high voltage clamping features.
This document is a technical datasheet for the STMicroelectronics STGD5NB120SZ-1 N-channel IGBT. The device utilizes high-voltage technology based on a patented strip layout to achieve outstanding performance with low on-voltage drop, making it suitable for applications requiring precise active clamping via a built-in collector-gate zener.
| Collector Current (continuous) at Tc = 25°C | 10 A |
|---|---|
| Collector Current (continuous) at Tc = 100°C | 5 A |
| Total Dissipation at Tc = 25°C | 55 W |
| Operating Junction Temperature range (Tj) | -55 to 150 °C |
The STGD5NB120SZ is available in DPAK and IPAK packages.
The device supports a maximum continuous collector current of 10 A when the case temperature is 25°C.
The total dissipation is rated at 55 W when the case temperature is maintained at 25°C.
The device can be stored in a temperature range from -55 to 150 °C.