STGB7NB40LZ is a high voltage insulated gate bipolar transistor (IGBT) designed by STMicroelectronics. It features low threshold voltage, low on-voltage drop, low gate charge, high current capability and high voltage clamping. The device is suitable for automotive ignition applications.
This document is a datasheet for the STGB7NB40LZ, an N-Channel Clamped 14A D2PAK IGBT manufactured by STMicroelectronics. The device utilizes PowerMESH™ technology and includes an internally clamped collector-gate zener for precise active clamping and an emitter-gate zener for ESD protection.
The datasheet provides absolute maximum ratings, electrical characteristics, and dynamic parameters. It includes detailed mechanical data for the D2PAK package, including dimensions for tube and tape-and-reel shipment. Application areas mentioned include automotive ignition and ABS systems.
| Collector Current (continuous) | 14 A |
|---|---|
| Total Dissipation | 100 W |
| Storage Temperature | -55 to 175 °C |
| Package Type | D2PAK |
The maximum continuous collector current at 100°C is 14 A.
The minimum external gate resistor required is 500 Ω.