This document describes the features and performance of the PowerMESH™ IGBT series products produced by STMicroelectronics. These products have high input impedance, low on-voltage drop (Vcesat), off losses including tail current, low gate charge, high current capability, and high frequency operation. They are suitable for motor controls, SMPS and PFC, and both hard switch and resonant topologies.
This document is a technical datasheet for the STGP7NB60FD and STGB7NB60FD N-Channel IGBTs from STMicroelectronics. These devices feature the PowerMESH™ technology and are optimized for high-frequency applications below 40kHz, such as motor controls and SMPS/PFC circuits. The family includes a co-packaged TurboSwitch™ antiparallel diode.
| Collector-Emitter Voltage | 600 V |
|---|---|
| Collector Current (continuous) at Tc = 25°C | 14 A |
| Collector Current (continuous) at Tc = 100°C | 7A |
| Collector-Emitter Saturation Voltage | 2.4 V |
| Total Dissipation at Tc = 25°C | 80 W |
| Max. Operating Junction Temperature | 150 °C |
| Package Types | TO-220 / D2PAK |
They are designed for motor controls, SMPS, PFC, and both hard switch and resonant topologies.
The family is optimized for high frequency applications below 40kHz.