The 2ST3360 is a fast dual complementary device (NPN and PNP) housed in a single LCC-6 hermetic Hi-Rel package, specifically designed for aerospace Hi- Rel applications. Its radiation hardness allows key parameters such as gain and leakage current to stay at best-in-class post irradiation levels. ST proprietary technology also results in a high degree of electrical performance for both transistors in the pair. The high switching performance of each make this device particularly suitable for power MOSFET driver applications.
The 2ST3360 is a high-reliability power bipolar transistor featuring both NPN and PNP structures in a single hermetic LCC-6 package. It is specifically engineered for aerospace Hi-Rel applications, offering radiation hardness to maintain electrical performance post-irradiation. The device supports fast-switching speeds with a transition frequency (fT) of 130 MHz.
| Collector current (Ic) | 0.8 A |
|---|---|
| Collector-emitter voltage (VCEO) | 60 V |
| Transition frequency (fT) | 130 MHz |
Yes, it is designed for aerospace Hi-Rel applications with specific radiation hardness.
The maximum operating junction temperature (Tj) is 200 °C.