STMicroelectronics STRH40P10 Rad-Hard P-channel MOSFET Datasheet

This document describes the features and characteristics of the Rad-Hard P-channel 100 V, 34 A Power MOSFET developed by STMicroelectronics.

Brand: STMicroelectronics
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 18
File format: PDF
File size: 400 KB
Published: 08 August, 2012
Updated: 28 September, 2023
MD5 checksum: 40F1C9953041EFBFF074DE0D5058BD43
PDF: STMicroelectronics STRH40P10 Rad-Hard P-channel MOSFET Datasheet PDF

About this manual

The STMicroelectronics STRH40P10 is a P-channel Power MOSFET developed using the company's unique STripFET™ process. It is specifically designed to sustain high Total Ionizing Dose (TID) and provide immunity to heavy ion effects, making it suitable for satellite and high-reliability applications. The device is available in a hermetic TO-254AA package and is 100% avalanche tested.

What's inside

Electrical ratings
Electrical characteristics
Radiation characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data
Order codes
Revision history

Specifications

Drain-source voltage	100 V
Drain current (continuous)	34 A
Total dissipation	176 W
Package	TO-254AA

Frequently asked questions

What is the application of the STRH40P10?

It is designed for satellite and high reliability applications.

Is the STRH40P10 radiation hardened?

Yes, it is a Rad-Hard P-channel Power MOSFET with 100 krad TID.

Download PDF (400 KB)