STMicroelectronics Manuals

RHFL7913A is a high performance Rad hard negative voltage regulator from ST company, providing 3A low dropout voltage, optional overtemperature and overcurrent protection, adjustable overcurrent limitation, load short circuit monitoring, adjustable output voltage, inhibit (ON/OFF) TTL-compatible control, programmable output short-circuit current limitation, remote sensing operation, suitable for space and harsh radiation environments

The RHF1201 is a 12-bit 50Msps sampling frequency analog-to-digital converter that uses pure (ELDRS-free) CMOS 0.25µm technology combining high performance, radiation robustness and very low power consumption.

This datasheet introduces the features of the 14-bit 30MspsRad-hardA/D converter RHF1401, including functions, applications, performances, and external dimensions.

The RHF43B is a high radiation immunity precision bipolar single operational amplifier. It features high radiation immunity, rail-to-rail output, 8 MHz gain bandwidth, low input offset voltage, etc.

The 2N2219AHR is a Hi-Rel NPN bipolar transistor with linear gain characteristics, designed for high-reliability applications such as aerospace.

2N2905AHR is a high-reliability PNP bipolar transistor with linear gain characteristics. It is ESCC qualified and designed for aerospace Hi-Rel applications.

The 2N3700HR is a silicon planar epitaxial NPN transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-004 specification.

The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications.

2N3019HR is a high-reliability NPN bipolar transistor with linear gain characteristics and ESCC qualification. It is specifically designed for aerospace applications. It has a BVCEO of 80V and a maximum IC of 1A.

2N3810HR is a dual matched PNP transistor released by ST. This transistor has high reliability, linear gain characteristics, ESCC certification, etc., and is suitable for aerospace and other high reliability applications.

The document describes the features of the 2N5153HR high-reliability PNP bipolar transistor, including linear gain characteristics, ESCC qualification, European preferred part list (EPPL), and radiation level.

The 2N5154HR is a silicon planar epitaxial NPN transistor in TO-39, TO-257 and SMD.5 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-010 specification.

This document provides preliminary information on a new product that is currently in development or undergoing evaluation. Details are subject to change. This is a 1 GHz low noise operational amplifier with a bandwidth of 1 GHz, a slew rate of 1800 V/μs, an input noise of 1.3 nV/√ Hz, distortion of -78 dBc, and a 100 Ω load optimized output stage.

This document provides preliminary information on a new product currently in development or undergoing evaluation. The product features include ultra-low power consumption and high-speed operational amplifier.