STMicroelectronics STRH40N6 Rad-Hard P-channel MOSFET Datasheet

About this manual

The document provides production data and specifications for the STRH40N6, a Rad-Hard P-channel 60 V, 30 A Power MOSFET. It is specifically developed using STMicroelectronics' unique STripFET™ process to sustain high Total Ionizing Dose (TID) and provide immunity to heavy ion effects.

The datasheet details absolute maximum ratings, electrical characteristics before and after irradiation, radiation characteristics including single event effects (SEE), thermal data, and package mechanical information. It covers applications in satellite systems requiring high reliability.

What's inside

• Electrical ratings
• Electrical characteristics
• Radiation characteristics
• Avalanche characteristics
• Thermal data
• Package mechanical data
• Order codes

Specifications

Frequently asked questions

What is the maximum continuous drain current at a junction temperature of 25°C?

The maximum continuous drain current at a junction temperature of 25°C is 30 A.

What are the storage and maximum operating junction temperatures for this device?

The storage temperature ranges from -55 to 150 °C, and the maximum operating junction temperature is 150 °C.

What is the total dissipation rating at a junction temperature of 25°C?

The total dissipation rating at a junction temperature of 25°C is 75 W.