STGY50NB60HD is an N-channel IGBT with features such as high input impedance, low on-voltage drop, low gate charge, high current capability, and very high frequency operation.
This document provides preliminary technical data for the STMicroelectronics STGY50NB60HD N-Channel IGBT, part of the PowerMESH family optimized for very low switching times in high-frequency applications. Key features include high input impedance, low on-voltage drop, and co-packaging with a TurboSwitch antiparallel diode.
| Collector-Emitter Voltage | 600 V |
|---|---|
| Collector Current (continuous) at Tc = 25°C | 100 A |
| Collector Current (continuous) at Tc = 100°C | 50 A |
| Collector Current (pulsed) | 400 A |
| Total Dissipation at Tc = 25°C | 250 W |
| Junction Temperature Max | 150°C |
The device is designed for high frequency motor controls, welding equipments, and SMPS and PFC in both hard switch and resonant topologies.
The maximum collector-emitter voltage (VCES) is 600 V.
Yes, the suffix 'H' identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).