This document describes the STMicroelectronics STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET, which features fast switching, 100% avalanche tested, hermetic package, 70 krad TID, and SEE radiation hardened.
The STRH8N10 is an N-channel Power MOSFET developed using the STripFET process, specifically designed to sustain high Total Ionizing Dose (TID) and provide immunity to heavy ion effects. It is suitable for satellite and high-reliability applications where radiation hardness is critical.
| Drain-source voltage | 100 V |
|---|---|
| Drain current (continuous) | 6 A |
| Total dissipation | 25 W |
| Storage temperature | -55 to 150 °C |
| Total Ionizing Dose (TID) | 70 krad |
The maximum operating junction temperature is 150 °C.
Yes, the device is 100% avalanche tested.