STMicroelectronics STRH100N10 Rad-Hard Power MOSFET Datasheet

The STRH100N10 is a 100 V, 48 A N-channel power MOSFET from STMicroelectronics. This MOSFET features fast switching, 100% avalanche tested, hermetic package, 70 krad TID, SEE radiation hardened, and is fully ESCC qualified.

Brand: STMicroelectronics
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 17
File format: PDF
File size: 469 KB
Published: 08 August, 2012
Updated: 01 October, 2023
MD5 checksum: A05DE8C4D3BE2C984F1D71E46BFFB18E
PDF: STMicroelectronics STRH100N10 Rad-Hard Power MOSFET Datasheet PDF

About this manual

The document describes the STMicroelectronics STRH100N10, an N-channel Power MOSFET developed with the unique STripFET™ process. It is specifically designed to sustain high Total Ionizing Dose (TID) and provide immunity to heavy ion effects, making it suitable for satellite applications.

What's inside

Electrical ratings
Electrical characteristics
Radiation characteristics
Single event effect SOA
Package mechanical data

Frequently asked questions

What is the primary application for this MOSFET?

The device is specifically designed for satellite applications.

Is the STRH100N10 radiation hardened?

Yes, it is a Rad-Hard 100 V MOSFET with 70 krad TID capability.

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