Fairchild manuals, page 128
FAIRCHILD FDMS7670AS Manual
The FDMS7670AS is a low rDS(on) and high efficiency N-channel power switch with MSL1 robust package design and 100% UIL tested. It is RoHS compliant. This device is suitable for synchronous rectifier in DC/DC converters, notebook Vcore/GPU low side switch, networking PoL low side switch and telecom secondary side rectification applications.
FAIRCHILD FDMS7672 Manual
The FDMS7672 is an N-Channel PowerTrench MOSFET designed to improve the efficiency and minimize switch node ringing of DC/DC converters. It features a low rDS(on) and high efficiency design with an advanced package and silicon design. The MOSFET is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
FAIRCHILD FDMS7672AS Manual
FAIRCHILD FDMS7676 Manual
FDMS7676 N-Channel PowerTrench® MOSFET is a low on-resistance, high efficiency, high switching speed, small package N-channel MOSFET, which is applicable to synchronous or conventional DC/DC converters.
FAIRCHILD FDMS7678 Manual
The FDMS7678 N-Channel Power Trench® MOSFET is a low-power, high-performance MOSFET product that is suitable for power management and load switching applications in notebook computers and portable battery packs.
FAIRCHILD FDMS7682 Manual
This document describes the features and characteristics of the FDMS7682 N-Channel PowerTrench® MOSFET, including maximum on-resistance, advanced package and silicon combination, next generation enhanced body diode technology, 100% UIL testing, and RoHS compliance.
FAIRCHILD FDMS7692 Manual
FDMS7692 N-Channel PowerTrench® MOSFET is a high efficiency MOSFET with a maximum rDS(on) of 7.5mΩ and can be used for IMVP Vcore Switching for Notebook, VRM Vcore Switching for Desktop and Server, OringFET / Load Switch, DC-DC Conversion and other applications.
FAIRCHILD FDMS7692A Manual
This document describes the features and characteristics of the FDMS7692A N-Channel PowerTrench® MOSFET, including maximum on-resistance, advanced package and silicon combination, next generation enhanced body diode technology, and RoHS compliance.
FAIRCHILD FDMS7698 Manual
The FDMS7698 N-Channel PowerTrench® MOSFET is a high efficiency N-Channel MOSFET with low gate charge, low Rds(on), fast switching speed and body diode reverse recovery performance.
FAIRCHILD FDMS7700S Manual
This document is about FDMS7700S's English datasheet, which mainly introduces the features and characteristics of the product, including rated voltage, maximum current, and maximum on resistance.
FAIRCHILD FDMS8018 handbook
The FDMS8018 is an N-Channel PowerTrench® MOSFET with a working voltage of 30V, a maximum operating current of 120A, and a maximum on-resistance of 1.8mΩ. It features advanced packaging and silicon material combination for low on-resistance and high efficiency. Additionally, it utilizes next generation enhanced body diode technology for soft recovery. It is suitable for applications such as VRM Vcore switching for desktop and server, OringFET/load switching, DC-DC conversion, and motor bridge switch.
FAIRCHILD FDMS8020 handbook
This FDMS8020 N-Channel PowerTrench® MOSFET datasheet introduces the features and characteristics of the product, including maximum RDS(on), package, and application scenarios
FAIRCHILD FDMS8023S handbook
This document introduces the FDMS8023S N-Channel PowerTrench® SyncFETTM, a high-performance synchronous rectifier that can be used for DC/DC converters, notebook Vcore/GPU low-side switches, networking point of load low-side switches and telecom secondary side rectification. This device utilizes the most advanced silicon and packaging technologies to offer the lowest rDS(on) while maintaining excellent switching performance.
FAIRCHILD FDMS8025S handbook
FDMS8025S N-Channel PowerTrench® SyncFET™ is a high performance power device with advanced package and silicon combination for low rDS(on) and high efficiency.
FAIRCHILD FDMS8026S handbook
The FDMS8026S is an N-Channel PowerTrench® SyncFETTM power MOSFET with a working voltage of 30V and a maximum drain-source resistance of 4.3mΩ and 5.2mΩ. The product combines advanced packaging and silicon technologies to achieve low drain-source resistance and high efficiency. Additionally, it features an efficient monolithic Schottky body diode. It is suitable for synchronous rectifiers in DC/DC converters, low-side switches for notebook Vcore/GPU, low-side switches for networking point of load, and secondary side rectification in telecom applications.