The FDMS7670AS is a low rDS(on) and high efficiency N-channel power switch with MSL1 robust package design and 100% UIL tested. It is RoHS compliant. This device is suitable for synchronous rectifier in DC/DC converters, notebook Vcore/GPU low side switch, networking PoL low side switch and telecom secondary side rectification applications.
The FDMS7670AS is an N-Channel PowerTrench SyncFET designed to minimize losses in power conversion applications. It combines advancements in silicon and package technologies to offer low on-resistance while maintaining excellent switching performance.
A key feature of this device is the efficient monolithic Schottky body diode, which eliminates the need for an external diode in many synchronous rectifier configurations. The datasheet provides detailed electrical characteristics, typical performance graphs, and dimensional outlines.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (Package Limited) | 42 A |
| Continuous Drain Current (Silicon Limited) | 113 A |
| Power Dissipation (Tc=25°C) | 65 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 1.9 C/W |
It is designed for synchronous rectifiers in DC/DC converters, notebook Vcore/GPU low side switches, networking point of load low side switches, and telecom secondary side rectification.
No, it features an efficient monolithic Schottky body diode integrated into the device.
The package-limited continuous drain current at 25°C is 42 A, while the silicon-limited rating is 113 A.