Fairchild manuals, page 126
FAIRCHILD FDN360P Manual
This document introduces the FDN360P single P-channel power MOSFET produced by Fairchild Semiconductor. This device is produced using the advanced Power Trench process, which minimizes on-state resistance and maintains low gate charge for superior switching performance. It is suitable for low voltage and battery powered applications that require low in-line power loss and fast switching.
FAIRCHILD FDN361BN Manual
FDN361BN is a 30V N-channel logic level PowerTrench MOSFET that has fast switching speed and low line losses. It is suitable for low voltage applications in notebook computers, portable phones, PCMCIA cards, etc.
FAIRCHILD FDN372S 30V N-Channel PowerTrench SyncFET Manual
The FDN372S is a 30V N-channel power trench SyncFET™ MOSFET designed to maximize power conversion efficiency with low Rds(on) and low gate charge. It is ideal as a low side switch in a synchronous converter.
FAIRCHILD FDMS3668S Manual
FDMS3668S is a dual N-channel MOSFET from Fairchild Semiconductor Corporation. It features low on-resistance and low voltage drop. It is suitable for applications such as computing, communications, general purpose point of load and notebook computers.
FAIRCHILD FDMS3672 N-Channel UltraFET Trench MOSFET Manual
FDMS3672 N-Channel UltraFET Trench MOSFET, max rDS(on) is 23mΩ, max ID is 22A, typical Qg is 31nC. These devices are ideal for high frequency DC-DC converters.
FAIRCHILD FDMS3686S Manual
FDMS3686S PowerTrench® Power Stage is a dual N-channel MOSFET that features low RDS(on), low inductance packaging and optimized layout for higher power efficiency.
FAIRCHILD FDMS4435BZ Manual
The FDMS4435BZ is a P-channel MOSFET produced by Fairchild Semiconductor using its advanced Power Trench® process. It features extremely low on-state resistance and is well suited for power management and load switching applications common in notebook computers and portable battery packs.
FAIRCHILD FDMS5352 Manual
This document is FDMS5352 N-Channel Power Trench® MOSFET's datasheet, it introduces its features and characteristics, including maximum voltage, maximum current, maximum on-state resistance, minimum on-state resistance, application scenarios, etc.
FAIRCHILD FDMS5672 Manual
This document describes the features and characteristics of the FDMS5672 N-Channel UltraFET Trench® MOSFET, including maximum rDS(on), maximum Qg, low Miller charge, and optimized efficiency at high frequencies.
FAIRCHILD FDMS6673BZ Manual
The FDMS6673BZ P-Channel PowerTrench® MOSFET is a high-performance device designed for use in load switch applications. It features an advanced package and silicon combination for low rDS(on), and an HBM ESD protection level of 8 kV typical.
FAIRCHILD FDMS6681Z Manual
This document describes the features and characteristics of the FDMS6681Z P-Channel PowerTrench® MOSFET product, released in May 2009, including maximum on-resistance, high ESD protection, etc.
FAIRCHILD FDMS7556S Manual
The FDMS7556S N-Channel PowerTrench® SyncFETTM is a low rDS(on) and high efficiency MOSFET. It has a maximum rDS(on) of 1.2 mΩ and an efficient monolithic Schottky body diode. It is suitable for synchronous buck converters, notebooks, servers, telecom and high efficiency DC-DC switch mode power supplies.
FAIRCHILD FDMS7558S Manual
FDMS7558S N-Channel PowerTrench®SyncFET is a low rDS(on) and high efficiency switch device, suitable for synchronous buck converters, notebooks, servers, telecom and high efficiency DC-DC switch power supplies
FAIRCHILD FDMS7560S Manual
This document describes the features of FDMS7560S N-Channel PowerTrench® SyncFETTM, including maximum on-resistance, advanced package and silicon combination, synchronous Schottky body diode, etc.
FAIRCHILD FDMS7570S Manual