BCX70K is an NPN epitaxial silicon transistor with a collector-base voltage of 45V, an emitter-base voltage of 5V, a collector current of 200mA, and a collector power dissipation of 350mW. This transistor has high IC and hFE values, low saturation voltage and on voltage, as well as low noise figure and output capacitance.
This document provides technical specifications for the Fairchild Semiconductor BCX70K, a general-purpose NPN epitaxial silicon transistor. It details absolute maximum ratings such as collector-emitter voltage of 45V and collector current up to 200mA.
The datasheet includes electrical characteristics like DC current gain ranging from 100 to 630 depending on test conditions, along with switching times for turn-on and turn-off. It also features a land pattern recommendation and dimensional drawings for the SOT-23 package.
| Collector-Base Voltage (Vcbo) | 45 V |
|---|---|
| Collector-Emitter Voltage (Vceo) | 45 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 200 mA |
| Collector Power Dissipation (Po) | 350 mW |
The DC current gain ranges from a minimum of 100 to a maximum of 630 under specified test conditions.
The BCX70K is available in a SOT-23 package with three leads and a low profile.