This document describes the absolute maximum ratings and thermal characteristics of the NPN switching transistor BSV52. This device is designed for high-speed saturated switching at collector currents of 10mA to 100mA. It has a collector-emitter voltage of 12V, a collector-base voltage of 20V, and an emitter-base voltage of 5.0V. The maximum collector current is 200mA. The operating temperature range is -55 to +150°C.
This document is a datasheet for the Fairchild Semiconductor BSV52, an NPN switching transistor designed for high-speed saturated switching. It supports collector currents ranging from 10 mA to 100 mA and is sourced from Process 21.
The datasheet provides absolute maximum ratings, electrical characteristics including DC current gain and saturation voltages, small signal parameters like transition frequency, and switching times. It also includes typical characteristic graphs and test circuit diagrams for measurement.
| Collector-Emitter Voltage (Vceo) | 12 V |
|---|---|
| Collector-Base Voltage (Vces) | 20 V |
| Emitter-Base Voltage (Veso) | 5.0 V |
| Collector Current - Continuous | 200 mA |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation (Pp) | 225 mW |
| Thermal Resistance, Junction to Ambient | 556 °C/W |
| Transition Frequency (fT) | 400 MHz |
The device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA.
The maximum Collector-Emitter Voltage is 12 V, Collector-Base Voltage is 20 V, and Emitter-Base Voltage is 5.0 V.
The operating and storage junction temperature range is from -55 to +150 °C.