FMBM5551 NPN General Purpose Amplifier is a dual NPN transistor from Fairchild Semiconductor Corporation. Its maximum power dissipation is 350mW, maximum collector-emitter voltage is 160V, maximum collector-base voltage is 180V, maximum emitter-base voltage is 6V, maximum collector current is 600mA.
The document describes the FMBM5551, an NPN General Purpose Amplifier sourced from process 16 with matched dies. It features a SuperSOT-6 package and includes absolute maximum ratings for collector-emitter voltage up to 160V and collector current up to 600mA.
The datasheet details electrical characteristics such as DC current gain, saturation voltages, and small signal parameters like output capacitance and current gain bandwidth product. It also provides typical characteristics graphs for collector current, saturation voltage, and cutoff current versus temperature and resistance.
| Collector-Emitter Voltage | 160 V |
|---|---|
| Collector-Base Voltage | 180 V |
| Emitter-Base Voltage | 6 V |
| Collector Current (DC) | 600 mA |
| Collector Dissipation | 0.7 W |
| Junction Temperature | 150 °C |
| Storage Temperature Range | -55 ~ 150 °C |
| Current Gain Bandwidth Product | 100 300 MHz |
The maximum collector-emitter voltage is 160 V.
The maximum DC collector current is 600 mA.
The junction temperature rating is 150 °C.