FMBS2383 is an NPN Epitaxial Silicon Transistor with Power Amplifier features. Its maximum collector-emitter voltage is 160V and maximum frequency gain bandwidth product is 120MHz.
This document is a datasheet for the Fairchild Semiconductor FMBS2383, an NPN epitaxial silicon transistor designed for power amplifier applications. Key features include a collector-emitter voltage rating of 160V and a current gain bandwidth product of at least 120MHz. The device is packaged in a SuperSOT-6 format.
| Collector-Emitter Voltage | 160 V |
|---|---|
| Current Gain Bandwidth Product | 120 MHz |
| Collector Current | 800 mA |
| Power Dissipation | 630 mW |
| DC Current Gain | 80 to 160 |
| Package Type | SuperSOT-6 |
The maximum collector-emitter voltage is 160V.
The maximum junction temperature is 150°C.
The minimum DC current gain is 80.