The MMBT5401 is a NPN type transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -150V, maximum collector-base voltage is -160V, maximum emitter-base voltage is -5.0V, and maximum collector current is -600mA. The operating temperature range is -55~150℃.
The document describes the MMBT5401 as a general purpose amplifier and switch designed for applications requiring high voltage. It is an NPN Epitaxial Silicon Transistor housed in an SOT-23 package.
Key specifications include a collector-emitter voltage of -150V, a continuous collector current of -600mA, and operating temperatures from -55°C to 150°C. The datasheet details absolute maximum ratings, electrical characteristics such as DC current gain and saturation voltages, thermal resistance, typical performance curves, and mechanical package dimensions.
| Emitter-Base Voltage (VEBO) | -5.0 v |
|---|---|
| Collector Current (Continuous) | -600 mA |
| Operating Junction Temperature Range | -55 ~ 150 °C |
| Total Device Dissipation (Pp) | 350 mW |
The device operates and stores within a junction temperature range from -55 to 150 °C.