Fairchild Manuals

BC337/338 is a NPN type silicon crystal transistor produced by Fairchild Semiconductor Corporation. Its maximum collector current is 800mA, the maximum collector-emitter voltage is 50V, the maximum emitter-base voltage is 5V, and the maximum package size is TO-92. It is suitable for AF-Driver stages and low power output stages.

BC327/328 is a PNP type RF switch and low power amplifier produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -50V, maximum collector-emitter reverse voltage is -45V, maximum emitter-base voltage is -5V, maximum collector current is -800mA, maximum collector power dissipation is 625mW, and maximum junction temperature is 150℃. Its typical storage temperature is -55℃ to 150℃.

2N6520 is a high voltage PNP type transistor from Fairchild Semiconductor, with a collector-emitter breakdown voltage of -350V and a maximum collector power dissipation of 0.625W.

This document describes the features and characteristics of the 2N6517 NPN Epitaxial Silicon Transistor, including high voltage, collector dissipation, complement to 2N6520, etc.

The document describes the features and characteristics of the products.

The MC3303/MC3403 is a quad operational amplifier with high gain, internally frequency compensated, designed to operate from a single power supply or dual power supplies over a wide range of voltages.

KSA992 is a PNP type audio frequency low noise amplifier produced by Fairchild Semiconductor Corporation. Its rated maximum voltage is -120V, maximum current is -50mA and maximum power is 500mW.

This document describes the absolute maximum ratings and electrical characteristics of the KSA931 PNP epitaxial silicon transistor released by Fairchild Semiconductor Corporation in 2002. The transistor is suitable for low frequency amplification and medium speed switching applications.

KSA928A is an audio power amplifier, complement to KSC2328A, with collector power dissipation of 1W and 3 watt output application.

This document is about the KSA916 datasheet. It is a PNP type silicon transistor manufactured by Fairchild Semiconductor Corporation. The datasheet provides the absolute maximum ratings, electrical characteristics, hFE classification, symbol parameters, test conditions, minimum values, typical values, maximum values, units, and figures.

This document describes the absolute maximum ratings and electrical characteristics of the KSA812 PNP epitaxial silicon transistor, including current gain, saturation voltage, and on voltage. In addition, it provides pinout diagram and hFE classification information.

This document presents the absolute maximum ratings and electrical characteristics of the KSA733 PNP Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor Corporation. The transistor is designed for low-frequency amplifier applications and features collector-base voltage, collector-emitter voltage, and emitter-base voltage, among others.

KSA708 is an NPN type silicon transistor, has the characteristics of low frequency amplifier and medium speed switching. The tube has -80V collector-base breakdown voltage, 800mW collector power dissipation, -0.7V collector-emitter saturation voltage and -1.1V base-emitter saturation voltage.

KSA643 is a PNP type low frequency power amplifier from Fairchild Semiconductor Corporation. It has a maximum collector current of 500mA, a maximum collector-emitter reverse voltage of -40V and a maximum emitter-base reverse voltage of -20V. The device is packaged in a TO-92 package and has a working temperature range of -55~150℃.

This document is about the absolute maximum ratings, electrical characteristics, classification, symbol, parameter, test condition, minimum value, typical value and maximum value of KSA539 PNP Epitaxial Silicon Transistor.