Fairchild Semiconductor FDMC7660 N-Channel PowerTrench MOSFET Datasheet

FDMC7660 N-Channel PowerTrench® MOSFET is a high-performance N-channel MOSFET with extremely low on-state resistance, suitable for power management and load switching applications in notebook computers and portable battery packs.


Fairchild Semiconductor FDMC7660 N-Channel PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
283 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
DCD98ECD99BD1231B456EB28E6FDB65D

About this manual

This document is a datasheet for the FDMC7660, an N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. The device is designed for power management and load switching applications, such as those found in notebook computers and portable battery packs. It utilizes the PowerTrench process to achieve extremely low on-state resistance.

What's inside

  • Features
  • General Description
  • Applications
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Marking
  • Ordering Information

Specifications

Drain to Source Voltage30 V
Gate to Source Voltage±20 V
Continuous Drain Current (Package limited)40 A
Continuous Drain Current (Silicon limited)100 A
Continuous Drain Current20 A
Pulsed Drain Current200 A
Power Dissipation41 W
Operating Junction Temperature Range-55 to + 150 °C
Thermal Resistance, Junction to Case3 °C/W
Thermal Resistance, Junction to Ambient53 °C/W
Static Drain to Source On Resistance2.2 mΩ

Frequently asked questions

What are the applications for the FDMC7660?

The device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Is the FDMC7660 termination lead-free?

Yes, the termination is Lead-free and RoHS Compliant.

What is the maximum on-resistance of the FDMC7660?

The maximum rDS(on) is 2.2 mΩ at VGS = 10 V and ID = 20 A.

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