The FDMC7660S is an N-channel power trench syncFET with a maximum rDS(on) of 2.2 mΩ, suitable for power conversion applications.
The FDMC7660S is an N-Channel Power Trench SyncFET designed to minimize losses in power conversion applications. It features a monolithic Schottky body diode and is available in a lead-free, RoHS-compliant package. The device is optimized for synchronous rectification in DC/DC converters and low-side switching applications.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 20 A |
| Continuous Drain Current (Silicon limited) | 100 A |
| Power Dissipation | 2.3 W |
| Thermal Resistance, Junction to Case | 3 °C/W |
| Thermal Resistance, Junction to Ambient | 53 °C/W |
| Gate to Source Threshold Voltage | 1.2 V to 2.5 V |
| Static Drain to Source On Resistance | 2.2 mQ to 3.4 mQ |
| Total Gate Charge | 95 nC |
| Reverse Recovery Time | 31 ns to 50 ns |
The device is designed for synchronous rectification in DC/DC converters, notebook Vcore/GPU low side switching, networking point of load low side switching, and telecom secondary side rectification.
Yes, the termination is lead-free and RoHS Compliant.
The operating and storage junction temperature range is from -55°C to +150°C.