FDMC6296 is a N-Channel Power Trench® MOSFET from Fairchild Semiconductor Corporation. It has a maximum drain-to-source voltage of 30V, a maximum drain-to-source current of 11.5A and a maximum on-resistance of 10.5mΩ. It is suitable for Point of Load converters and 1/16 Brick synchronous rectifiers.
The FDMC6296 is a single N-Channel MOSFET designed for use in Point of Load converters and as a synchronous rectifier. It features a low on-resistance of 10.5 mQ at Vgs = 10 V and Id = 11.5 A, along with low gate charge for efficient switching performance. The device is RoHS compliant and available in the thermally efficient MicroFET Package (MLP 3.3x3.3).
Key electrical characteristics include a drain to source breakdown voltage of 30 V, a maximum continuous drain current of 11.5 A at 25°C, and a power dissipation of 21 W at 25°C. The datasheet provides detailed electrical characteristics, typical performance graphs, and dimensional outlines for the package.
| Package Type | MLP 3.3x3.3 |
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Yes, the device is RoHS compliant.