The FDMC6675BZ is a P-Channel Power Trench MOSFET from Fairchild Semiconductor. This product features extremely low rDS(on) and can be used in load switch applications in notebook computers and servers.
The document is a technical datasheet for the Fairchild Semiconductor FDMC6675BZ, a P-Channel Power Trench MOSFET rated at -30 V and -20 A. It features low on-resistance (14.4 mΩ typical) and high ESD protection levels suitable for battery applications in notebooks and servers.
The datasheet provides comprehensive electrical characteristics including off-state breakdown voltage, threshold voltage, static drain-to-source resistance, and switching parameters such as turn-on delay time. It also includes thermal data, package dimensions, and typical performance curves.
| Drain to Source Voltage (Vdss) | -30 V |
|---|---|
| Continuous Drain Current (Package limited) | -20 A |
| Static Drain to Source On Resistance (Typical) | 14.4 mΩ |
| HBM ESD Protection Level | 8 kV typical |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum static drain-to-source on resistance (Rds(on)) is 14.4 mΩ at Vgs = -10 V and Id = -9.5 A.
The device is designed for load switch applications in notebooks and server battery pack power management.
Yes, the termination is Lead-free and RoHS Compliant.