The FDMC6679AZ P-Channel PowerTrench® MOSFET is a low-resistance MOSFET with a maximum on-resistance of 10 mΩ. The device uses advanced trench technology and has high power and current handling capabilities, and is RoHS compliant.
The document describes the Fairchild Semiconductor FDMC6679AZ, a P-Channel PowerTrench MOSFET rated at -30 V and -20 A. It is specifically designed to minimize losses in load switch applications by combining silicon advancements with package technologies to offer extremely low on-resistance (10 mΩ) and high ESD protection.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltage, threshold voltage, static drain-to-source on-resistance, and dynamic switching parameters. It also includes typical performance curves for on-resistance versus junction temperature, gate charge characteristics, capacitance, and safe operating areas.
| Drain to Source Voltage | -30 V |
|---|---|
| Gate to Source Voltage | +25 V |
| Continuous Drain Current (Package limited) | -20 A |
| Continuous Drain Current (Silicon limited) | -51 A |
| Power Dissipation | 41 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 3 °C/W |
The maximum static drain-to-source on-resistance (Rds(on)) is 18 mΩ at Vgs = -4.5 V and Id = -8.5 A.
It is designed for use as a load switch in notebook and server battery pack power management systems.